- Home
- Archives
- 2024
- Vol. 4 Issue 3
- Article
A Study on Unified Modelling Approach for Memristor: Next Generation Semiconductor Devices
Authors
1Professor, EEE Department, Kumaraguru College of Technology, Coimbatore, Tamil Nadu, India. 2,3,4 UG scholar, EEE Department, Kumaraguru College of Technology, Coimbatore, Tamil Nadu, India.
Article Information
- Published In
- Volume 4, Issue 3 (2024)
- Published Online
- May-June 2024
- Pages
- 25-31
- Article Type
- Research Article
- Check for updates
-
Abstract
View PDFThis research investigates the voltage-current (V-I) characteristics of three distinct memristor models, each representing a unique composition and behaviour. The model, denoted as TiN-TiOx-HfOx-Pt-Bilayered Memristor model, is a compact representation designed for Metal–Oxide Resistive Random Access Memory (RRAM). Matlab tool is used for the simulation to analyse V-I characteristics of Memristor. Through comprehensive analysis and simulations, we aim to provide a detailed insight into the intrinsic behaviours of the memristor models. Understanding the V-I characteristics of these models is crucial for their potential applications in emerging memory technologies. This Study elaborate the mathematical modelling of memristor with the outcome untuned V-I Characteristics - DC Switching characteristics. The findings contribute to the broader field of memristor research, fostering advancements in electronic memory devices and computational systems.
Related Articles
Share Article
*Instagram doesn't support direct link sharing from web. Copy the link and share it in your Instagram story or post.